Stress voiding in metals is critical to the reliability of interconnect structures in semiconductor devices. It is a wearout mechanism of diffusion process driven by the stresses that arise from the mismatch in thermal expansion of metal and dielectric used in the structures. In the last three decades considerable advances have been made to understand the stress voiding in aluminum, and most recently, focus has been shifted to copper in modern advanced interconnects. In the former case aluminum is isotropic while in the latter copper is anisotropic. Our understanding of stress voiding in aluminum encapsulated in an oxide dielectric cannot be translated to copper in the same dielectric or low permittivity dielectrics being introduced to enhance interconnect circuit performance. In this talk we present the mechanics of stress voiding in an anisotropic metal film that consists of various grains with different orientations. Because of the anisotropy stress voiding highly depends on film textures, and it is enhanced by grain boundary sliding due to the elastic mismatch across grain boundaries. The results are discussed and compared with experiments in the context of nucleation and void growth in both copper and aluminum thin films capped with various dielectrics.