Semiconductor Nanostructures: Phase Separation, Self-Assembly, and 3D Quantum Dot Crystals


Rachel S. Goldman

Dept. of Materials Science & Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, MI 48109-2136 USA

Recently, semiconductor nanostructures have shown significant promise for a wide range of electronic, optoelectronic, and photovoltaic applications. In this talk, I will discuss various methods for synthesizing semiconductor nanostructures, including phase separation-induced alloy nanostructures and strain-induced self-assembled quantum dots. I will show how we have used these nanostructures for fundamental studies of the mechanisms of amorphous-crystalline transitions and alloy phase separation, as well as the first direct atom level measurements of very short interdiffusion and segregation lengths [1,2]. I will also present a novel scheme for the design and synthesis of three-dimensional quantum dot crystals.

[1] B. Lita, R.S. Goldman, et al, Appl. Phys. Lett. 75, 2797 (1999).
[2] B. Lita, R.S. Goldman, et al, Surface Review and Letters 7, 539 (2000).
[3] This work is supported in part by NSF, DOE, AFOSR, ARO, DARPA, TRW, and ACS-PRF.